Datasheet > MRF5S9101NBR1

MRF5S9101NBR1

更新时间： 2024-11-12 20:29:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		局域网光电二极管
页数	文件大小	规格书
16页	449K
描述
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272, PLASTIC, CASE 1484-02, 4 PIN

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MRF5S9101NBR1 技术参数

生命周期：	Obsolete	零件包装代码：	TO-272
包装说明：	FLANGE MOUNT, R-PDFM-F4	针数：	4
Reach Compliance Code：	unknown	风险等级：	5.27
Is Samacsys：	N	Base Number Matches：	1

MRF5S9101NBR1 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF5S9101/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with

frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier

MRF5S9101NR1

MRF5S9101NBR1

MRF5S9101MR1

MRF5S9101MBR1

applications.

GSM Application

869-960 MHz, 100 W, 26 V

GSM/GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

• Typical GSM Performance: V_DD= 26 Volts, I_DQ= 700 mA, P_out

100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain - 17.5 dB

Drain Efficiency - 60%

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 650 mA, P_out

50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain — 18 dB

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 2.3% rms

• Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,

CASE 1486-03, STYLE 1

TO-270 WB-4

@ f = 960 MHz

PLASTIC

MRF5S9101NR1(MR1)

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• N Suffix Indicates Lead-Free Terminations

• 200°C Capable Plastic Package

CASE 1484-02, STYLE 1

TO-272 WB-4

PLASTIC

MRF5S9101NBR1(MBR1)

• TO-270 WB-4 in Tape and Reel. R1 Suffix - 500 Units per 32 mm, 13 inch

Reel.

• TO-272 WB-4 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch

Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

- 0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

427

2.44

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value (1)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 80°C, 50 W CW

°C/W

0.41

0.47

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

REV 0

MOTOROLA RF DEVICE DATA

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

 Motorola, Inc. 2004

12 3 4 5 6 7...16

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与MRF5S9101NBR1相关器件

型号	品牌	获取价格	描述	数据表
MRF5S9101NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9101NR1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, PLASTIC, CASE 1486-03, 4 PIN
MRF5S9150HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S9150HR3_09	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF5S9150HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6.3	BEL	获取价格	Fast Acting Radial Lead Micro Fuse Series
MRF6.3AMMO	BEL	获取价格	暂无描述
MRF604	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-
MRF604	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
MRF607	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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