Datasheet > MRF5S9150HR3_09

MRF5S9150HR3_09

更新时间： 2024-11-12 10:47:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	462K
描述
RF Power Field Effect Transistor

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MRF5S9150HR3_09 数据手册

Document Number: MRF5S9150H-1

Rev. 2, 12/2009

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for N-CDMA base station applications with frequencies from 869

to 960 MHz. Suitable for multicarrier amplifier applications.

MRF5S9150HR3

• Typical Single-Carrier N-CDMA Performance @ 880 MHz: V_DD= 28 Volts,

I_DQ= 1500 mA, P_out= 33 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

ꢀPower Gain — 19.7 dB

ꢀDrain Efficiency — 28.4%

ꢀACPR @ 750 kHz Offset — -46.8 dBc in 30 kHz Bandwidth

880 MHz, 33 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFET

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465-06, STYLE 1

NI-780

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +15

-ꢁ65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

DSS

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

200

°C

Table 2. Thermal Characteristics

Characteristic

(1)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 150 W CW

Case Temperature 76°C, 33 W CW

°C/W

0.34

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

Machine Model (per EIA/JESD22-A115)

Charge Device Model (per JESD22-C101)

1C (Minimum)

A (Minimum)

III (Minimum)

ꢂꢃ1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF5S9150HR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF5S9150HR3_09相关器件

型号	品牌	获取价格	描述	数据表
MRF5S9150HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6.3	BEL	获取价格	Fast Acting Radial Lead Micro Fuse Series
MRF6.3AMMO	BEL	获取价格	暂无描述
MRF604	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-
MRF604	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
MRF607	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF607	ADPOW	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF607	MOTOROLA	获取价格	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-39
MRF607	NJSEMI	获取价格	Trans GP BJT NPN 16V 0.33A 3-Pin TO-39
MRF616	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR

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