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MRF641 PDF预览

MRF641

更新时间: 2024-11-11 22:51:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频双极晶体管
页数 文件大小 规格书
4页 107K
描述
RF POWER TRANSISTOR NPN SILICON

MRF641 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-CXFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.06Is Samacsys:N
最大集电极电流 (IC):3 A基于收集器的最大容量:60 pF
集电极-发射极最大电压:16 V配置:SINGLE
最小直流电流增益 (hFE):30最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-CXFM-F4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:43.7 W最大功率耗散 (Abs):50 W
最小功率增益 (Gp):7.8 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:UNSPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF641 数据手册

 浏览型号MRF641的Datasheet PDF文件第2页浏览型号MRF641的Datasheet PDF文件第3页浏览型号MRF641的Datasheet PDF文件第4页 
Order this document  
by MRF641/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial  
and commercial FM equipment operating to 512 MHz.  
Specified 12.5 Volt, 470 MHz Characteristics —  
Output Power = 15 Watts  
15 W, 470 MHz  
Minimum Gain = 7.8 dB  
Efficiency = 55%  
CONTROLLED Q  
RF POWER  
TRANSISTOR  
NPN SILICON  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
Built–In Matching Network for Broadband Operation  
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @  
16–Volt High Line and Overdrive  
Circuit board photomaster available upon request by contacting RF Tactical  
Marketing in Phoenix, AZ.  
CASE 316–01, STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
16  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
36  
4.0  
3.0  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
43.7  
0.25  
Watts  
W/°C  
C
Storage Temperature Range  
THERMAL CHARACTERISTICS  
T
stg  
65 to +150  
°C  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
4.0  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 20 mAdc, I = 0)  
V
16  
36  
4.0  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Emitter Breakdown Voltage  
(I = 20 mAdc, V = 0)  
V
(BR)CES  
(BR)EBO  
C
BE  
Emitter–Base Breakdown Voltage  
(I = 5.0 mAdc, I = 0)  
V
Vdc  
E
C
Collector Cutoff Current  
(V = 15 Vdc, V = 0, T = 25°C)  
I
5.0  
mAdc  
(continued)  
CES  
CE BE  
C
REV 6  
Motorola, Inc. 1994  

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