Datasheet > MRF6522-70R3_08

MRF6522-70R3_08

更新时间： 2022-12-24 08:11:58

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
10页	336K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF6522-70R3_08 数据手册

Document Number: MRF6522--70

Rev. 9, 10/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for GSM 900 frequency band, the high gain and broadband

performance of this device make it ideal for large--signal, common source

amplifier applications in 26 volt base station equipment.

MRF6522--70R3

•

Specified Performance @ 940 MHz, 26 Volts

Output Power, P1dB — 80 Watts (Typ)

Power Gain @ P1dB — 16 dB (Typ)

Efficiency @ P1dB — 58% (Typ)

920--960 MHz, 70 W, 26 V

LATERAL N--CHANNEL

RF POWER MOSFET

•

Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output

Power

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

CASE 465D--05, STYLE 1

NI--600

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +65

±20

Unit

Vdc

Adc

Drain--Source Voltage

Gate--Source Voltage

DSS

Drain Current — Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

159

0.9

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

--65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value

Unit

1.1

°C/W

NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6522--70R3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...10

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