是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.92 |
最大集电极电流 (IC): | 0.03 A | 配置: | Single |
最小直流电流增益 (hFE): | 30 | JESD-609代码: | e0 |
最高工作温度: | 200 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.35 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF6P18190HR6 | FREESCALE |
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
MRF6P21190HR6 | FREESCALE |
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RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET | |
MRF6P21190HR6_06 | FREESCALE |
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
MRF6P21190HR6_10 | FREESCALE |
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RF Power Field Effect Transistor | |
MRF6P23190H_08 | FREESCALE |
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RF Power Field Effect Transistor | |
MRF6P23190HR5 | NXP |
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TRANSISTOR,MOSFET,N-CHANNEL,68V V(BR)DSS,SOT-494AVAR | |
MRF6P23190HR6 | FREESCALE |
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
MRF6P24190HR5 | NXP |
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TRANSISTOR,MOSFET,N-CHANNEL,68V V(BR)DSS,SOT-494A | |
MRF6P24190HR6 | FREESCALE |
获取价格 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
MRF6P24190HR6_08 | FREESCALE |
获取价格 |
RF Power Field Effect Transistor |