Datasheet > MRF6P9220HR3_06

MRF6P9220HR3_06

更新时间： 2024-02-08 16:10:56

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF6P9220HR3_06 数据手册

Document Number: MRF6P9220H

Rev. 2, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large-signal, common-source amplifier

applications in 28 volt base station equipment.

MRF6P9220HR3

• Typical Single-Carrier N-CDMA Performance @ 880 MHz: V_DD= 28 Volts,

_DQ= 1600 mA, P_out= 47 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

880 MHz, 47 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFET

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 20 dB

Drain Efficiency — 30%

ACPR @ 750 kHz Offset — -47.1 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Device Designed for Push-Pull Operation Only

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

CASE 375G-04, STYLE 1

NI-860C3

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +68

-0.5, +12

Total Device Dissipation @ T = 25°C

Derate above 25°C

700

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 220 W CW

Case Temperature 76°C, 47 W CW

°C/W

0.25

0.28

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6P9220HR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF6P9220HR3_06相关器件

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MRF6P9220HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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