Datasheet > MRF6S19060NR1_08

MRF6S19060NR1_08

更新时间： 2024-01-27 14:50:48

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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RF Power Field Effect Transistors

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MRF6S19060NR1_08 数据手册

Document Number: MRF6S19060N

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA base station applications with frequencies from 1930

to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF6S19060NR1

MRF6S19060NBR1

• Typical 2-Carrier N-CDMA Performance: V_DD= 28 Volts,

I_DQ= 610 mA, P_out= 12 Watts Avg., Full Frequency Band, IS-95 CDMA

(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB

1930-1990 MHz, 12 W AVG., 28 V

2 x N-CDMA

Drain Efficiency — 26%

IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth

ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1486-03, STYLE 1

TO-270 WB-4

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

PLASTIC

MRF6S19060NR1

Applications

• 200_C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S19060NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +175

200

Unit

Vdc

°C

Drain-Source Voltage

DSS

Gate-Source Voltage

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

Characteristic

stg

°C

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 81°C, 60 W CW

Case Temperature 79°C, 12 W CW

°C/W

0.84

1.0

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S19060NR1 MRF6S19060NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

中文翻译

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与MRF6S19060NR1_08相关器件

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MRF6S19100HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19100N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19100NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19100NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19120H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19120HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
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