Datasheet > MRF6S19140HSR3

MRF6S19140HSR3

更新时间： 2024-01-19 09:05:41

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
12页	398K
描述
N-Channel Enhancement-Mode Lateral MOSFETs

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MRF6S19140HSR3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	FLATPACK, R-CDFP-F2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.31.00.01
风险等级：	5.73	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	68 V
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	L BAND
JESD-30 代码：	R-CDFP-F2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	225 °C	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLATPACK
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	530 W	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

MRF6S19140HSR3 数据手册

Document Number: MRF6S19140H

Rev. 2, 7/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S19140HR3

MRF6S19140HSR3

Designed for PCN and PCS base station applications with frequencies from

1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN-PCS/cellular radio and WLL

applications.

• Typical 2-carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ= 1150 mA,

1990 MHz, 29 W AVG., 28 V

2 x N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

_out= 29 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8

dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB

Drain Efficiency — 27.5%

IM3 @ 2.5 MHz Offset — -37 dBc @ 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — -51 dBc @ 30 kHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

CASE 465B-03, STYLE 1

NI-880

MRF6S19140HR3

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• Pb-Free and RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF6S19140HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +68

-0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

530

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

- 65 to +150

200

°C

stg

140

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 140 W CW

Case Temperature 77°C, 29 W CW

°C/W

0.33

0.38

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

下载PDF

与MRF6S19140HSR3相关器件

型号	品牌	描述	获取价格	数据表
MRF6S19200H	FREESCALE	RF Power Field Effect Transistors	获取价格
MRF6S19200HR3	FREESCALE	RF Power Field Effect Transistors	获取价格
MRF6S19200HSR3	FREESCALE	RF Power Field Effect Transistors	获取价格
MRF6S20010GNR1	FREESCALE	RF Power Field Effect Transistors	获取价格
MRF6S20010NR1	FREESCALE	RF Power Field Effect Transistors	获取价格
MRF6S20010NR1_09	FREESCALE	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S19140HSR3

MRF6S19140HSR3 技术参数

MRF6S19140HSR3 数据手册

与MRF6S19140HSR3相关器件

与MRF6S19140HSR3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S19140HSR3

MRF6S19140HSR3 技术参数

MRF6S19140HSR3 数据手册

与MRF6S19140HSR3相关器件

与MRF6S19140HSR3相关文章

您还可以找

您在本页遇到什么问题？