Datasheet > MRF6S19200HSR3

MRF6S19200HSR3

更新时间： 2024-11-01 04:14:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	404K
描述
RF Power Field Effect Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF6S19200HSR3 数据手册

Document Number: MRF6S19200H

Rev. 0, 3/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to

1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for PCN-PCS/cellular radio applications.

MRF6S19200HR3

MRF6S19200HSR3

• Typical Single-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ

1600 mA, P_out= 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1,

64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

1930-1990 MHz, 56 W AVG., 28 V

SINGLE W-CDMA

Power Gain — 17.9 dB

Drain Efficiency — 29.5%

Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — -36 dBc in 3.84 MHz Channel Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW

Output Power

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

CASE 465-06, STYLE 1

NI-780

• Integrated ESD Protection

MRF6S19200HR3

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF6S19200HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +66

-6.0, +10

32, +0

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

Storage Temperature Range

Case Operating Temperature

stg

- 65 to +150

150

°C

(1,2)

Operating Junction Temperature

225

°C

CW Operation @ T = 25°C

Derate above 25°C

130

0.49

W/°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 110°C, 89 W CW

Case Temperature 100°C, 55 W CW

°C/W

0.35

0.36

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S19200HR3 MRF6S19200HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

下载PDF

与MRF6S19200HSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF6S20010GNR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S20010NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S20010NR1_09	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21050LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21060NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21060NR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21060NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

与MRF6S19200HSR3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S19200HSR3

MRF6S19200HSR3 数据手册

与MRF6S19200HSR3相关器件

与MRF6S19200HSR3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S19200HSR3

MRF6S19200HSR3 数据手册

与MRF6S19200HSR3相关器件

与MRF6S19200HSR3相关文章

您还可以找

您在本页遇到什么问题？