Datasheet > MRF6S20010NR1

MRF6S20010NR1

更新时间： 2024-11-01 02:52:23

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RF Power Field Effect Transistors

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MRF6S20010NR1 数据手册

Document Number: MRF6S20010N

Rev. 1, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF6S20010NR1

MRF6S20010GNR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for Class A or Class AB general purpose applications with

frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

and multipurpose amplifier applications.

• Typical Two-Tone Performance @ 2170 MHz: V_DD= 28 Volts, I_DQ

130 mA, P_out= 10 Watts PEP

Power Gain — 15.5 dB

1600-2200 MHz, 10 W, 28 V

GSM/GSM EDGE

SINGLE N-CDMA

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 36%

IMD — -34 dBc

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 130 mA,

_out= 1 Watt Avg., Full Frequency Band (2130-2170 MHz), Channel

Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability

Power Gain — 15.5 dB

Drain Efficiency — 15%

IM3 @ 10 MHz Offset — -47 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -49 dBc in 3.84 MHz Channel Bandwidth

• Typical Single-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ

CASE 1265-08, STYLE 1

TO-270-2

130 mA, P_out= 1 Watt Avg., Full Frequency Band (1930-1990 MHz),

IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Band-

width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 15.5 dB

PLASTIC

MRF6S20010NR1

Drain Efficiency— 16%

ACPR @ 885 kHz Offset = -60 dBc in 30 kHz Bandwidth

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 130 mA, P_out

4 Watts Avg., Full Frequency Band (1805-1880 MHz)

Power Gain — 16 dB

CASE 1265A-02, STYLE 1

TO-270-2 GULL

PLASTIC

Drain Efficiency — 33%

EVM — 1.3% rms

MRF6S20010GNR1

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• 200°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

-65 to +175

200

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

DSS

Storage Temperature Range

Operating Junction Temperature

stg

°C

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...24

中文翻译

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与MRF6S20010NR1相关器件

型号	品牌	获取价格	描述	数据表
MRF6S20010NR1_09	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21050LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21060NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21060NR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21060NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors

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