Datasheet > MRF6S21060NBR1

MRF6S21060NBR1

更新时间： 2024-11-01 03:46:59

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频光电二极管放大器局域网
页数	文件大小	规格书
18页	803K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF6S21060NBR1 数据手册

Document Number: MRF6S21060N

Rev. 4, 12/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S21060NR1

MRF6S21060NBR1

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio, WLL and

TD-SCDMA applications.

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts,

_DQ= 610 mA, P_out= 14 Watts Avg., Full Frequency Band, Channel

2110-2170 MHz, 14 W AVG., 28 V

2 x W-CDMA

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 15.5 dB

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 26%

IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth

ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF6S21060NR1

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• 200_C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S21060NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

200

Unit

Vdc

°C

Drain-Source Voltage

DSS

Gate-Source Voltage

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

Characteristic

stg

°C

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 79°C, 60 W CW

Case Temperature 76°C, 14 W CW

°C/W

0.89

1.04

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S21060NR1 MRF6S21060NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...18

中文翻译

下载PDF

与MRF6S21060NBR1相关器件

型号	品牌	获取价格	描述	数据表
MRF6S21060NR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21060NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21100NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S21100NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3_07	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3_10	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

与MRF6S21060NBR1相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S21060NBR1

MRF6S21060NBR1 数据手册

与MRF6S21060NBR1相关器件

与MRF6S21060NBR1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF6S21060NBR1

MRF6S21060NBR1 数据手册

与MRF6S21060NBR1相关器件

与MRF6S21060NBR1相关文章

您还可以找

您在本页遇到什么问题？