Datasheet > MRF6S21100HSR3

MRF6S21100HSR3

更新时间： 2024-09-23 21:53:59

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S21100HSR3 数据手册

MRF6S21100H

Rev. 2, 12/2004

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF6S21100HR3

MRF6S21100HSR3

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts,

_DQ= 950 mA, P_out= 23 Watts Avg., Full Frequency Band, Channel Band-

width = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 15.9 dB

2170 MHz, 23 W AVG., 28 V

2 x W-CDMA

Drain Efficiency — 27.6%

IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -39.5 dBc @ 3.84 MHz Channel Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

CASE 465-06, STYLE 1

NI-780

Applications

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF6S21100HR3

CASE 465A-06, STYLE 1

NI-780S

MRF6S21100HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +68

-0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

388

2.2

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

(1)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 77°C, 23 W CW

°C/W

0.45

0.52

1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6S21100HR3 MRF6S21100HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF6S21100HSR3相关器件

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