Datasheet > MRF6S21050LSR3

MRF6S21050LSR3

更新时间： 2024-10-31 21:54:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	427K
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RF Power Field Effect Transistors

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MRF6S21050LSR3 数据手册

MRF6S21050L

Rev. 0, 3/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S21050LR3

MRF6S21050LSR3

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 450 mA,

P_out= 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth =

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB

2170 MHz, 11.5 W AVG., 28 V

2 x W-CDMA

Drain Efficiency — 27.7%

IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -40 dBc @ 3.84 MHz Channel Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

CASE 465E-04, STYLE 1

NI-400

Applications

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

MRF6S21050LR3

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

CASE 465F-04, STYLE 1

NI-400S

MRF6S21050LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +68

-0.5, +12

Total Device Dissipation @ T = 25°C

Derate above 25°C

151

0.86

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

- 65 to +150

°C

stg

200

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6S21050LR3 MRF6S21050LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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