Datasheet > MRF6S19100NR1

MRF6S19100NR1

更新时间： 2024-10-31 07:03:19

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	621K
描述
RF Power Field Effect Transistors

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MRF6S19100NR1 数据手册

Document Number: MRF6S19100N

Rev. 1, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S19100NR1

MRF6S19100NBR1

Designed for N-CDMA base station applications with frequencies from 1930

to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ= 950 mA,

P_out= 22 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync,

Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.

PAR = 9.8 dB @ 0.01% Probability on CCDF.

1930-1990 MHz, 22 W AVG., 28 V

2 x N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 14.5 dB

Drain Efficiency — 25.5%

IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth

ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF6S19100NR1

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• N Suffix Indicates Lead-Free Terminations

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• 200°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S19100NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +68

-0.5, +12

Total Device Dissipation @ T = 25°C

Derate above 25°C

287

1.64

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +175

200

°C

stg

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 75°C, 23 W CW

°C/W

0.61

0.65

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S19100NR1 MRF6S19100NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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