Datasheet > MRF6S19140HR3_07

MRF6S19140HR3_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S19140HR3_07 数据手册

Document Number: MRF6S19140H

Rev. 5, 5/2007

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S19140HR3

MRF6S19140HSR3

Designed for PCN and PCS base station applications with frequencies from

1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN-PCS/cellular radio and WLL

applications.

• Typical 2-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ= 1150 mA,

1930-1990 MHz, 29 W AVG., 28 V

2 x N-CDMA

_out= 29 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync,

Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz,

PAR = 9.8 dB @ 0.01% Probability on CCDF.

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 16 dB

Drain Efficiency — 27.5%

IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 465B-03, STYLE 1

NI-880

MRF6S19140HR3

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF6S19140HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 140 W CW

Case Temperature 77°C, 29 W CW

°C/W

0.33

0.38

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

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