Datasheet > MRF6S19140HR3_07

MRF6S19140HR3_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
11页	405K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S19140HR3_07 数据手册

TYPICAL CHARACTERISTICS

Ideal

= 28 Vdc, P = 160 W (PEP), I = 1150 mA

out DQ

Two−Tone Measurements

P3dB = 53.1 dBm (204 W)

P1dB = 52.3 dBm (171 W)

−10

−20

−30

−40

(f1 + f2)/2 = Center Frequency of 1960 MHz

Actual

3rd Order

5th Order

= 28 Vdc, I = 1150 mA

7th Order

−50

−60

Pulsed CW, 8 μsec(on), 1 msec(off)

f = 1960 MHz

0.1

100

28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

TWO−TONE SPACING (MHz)

P , INPUT POWER (dBm)

Figure 7. Intermodulation Distortion Products

versus Tone Spacing

Figure 8. Pulsed CW Output Power versus

Input Power

−20

= 28 Vdc, I = 1150 mA

IM3

f1 = 1958.75 MHz, f2 = 1961.25 MHz

2−Carrier N−CDMA, 2.5 MHz Carrier

Spacing, 1.2288 MHz Channel

Bandwidth, PAR = 9.8 dB

−30

−40

ACPR

@ 0.01% Probability (CCDF)

= 25°C

−50

−60

−70

100

, OUTPUT POWER (WATTS) AVG.

out

Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain

and Drain Efficiency versus Output Power

= 32 V

28 V

24 V

= 28 Vdc, I = 1150 mA

= 1150 mA

f = 1960 MHz

f = 1960 MHz, T = 25°C

100

P , OUTPUT POWER (WATTS) CW

out

150

200

250

, OUTPUT POWER (WATTS) CW

100

300

out

Figure 11. Power Gain versus Output Power

Figure 10. Power Gain and Drain Efficiency

versus CW Output Power

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

1...3 4 567 8 9...11

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