Datasheet > MRF6S19140HR3_07

MRF6S19140HR3_07

更新时间： 2024-01-15 17:40:32

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
11页	405K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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数据手册

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MRF6S19140HR3_07 数据手册

TYPICAL CHARACTERISTICS

= 28 Vdc, P = 29 W (Avg.), I = 1150 mA

out DQ

2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,

1.2288 MHz Channel Bandwidth, PAR = 9.8 dB

@ 0.01% Probability (CCDF)

−10

−12

−14

−16

−18

−20

−22

−24

−26

−28

−30

−10

−20

−40

IRL

IM3

−60

ACPR

−80

−100

1910 1920 1930 1940 1950 1960 1970 1980 1990 2000

f, FREQUENCY (MHz)

Figure 3. 2-Carrier N-CDMA Broadband Performance @ P_out= 29 Watts Avg.

= 28 Vdc, P = 75 W (Avg.), I = 1150 mA

out DQ

2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,

1.2288 MHz Channel Bandwidth, PAR = 9.8 dB

@ 0.01% Probability (CCDF)

−10

−12

−14

−16

−18

−20

−22

−24

−26

−28

−30

IRL

−20

−40

−60

−80

IM3

ACPR

1910 1920 1930 1940 1950 1960 1970 1980 1990 2000

f, FREQUENCY (MHz)

Figure 4. 2-Carrier N-CDMA Broadband Performance @ P_out= 75 Watts Avg.

−10

= 28 Vdc

f1 = 1958.75 MHz, f2 = 1961.25 MHz

= 1700 mA

Two−Tone Measurements, 2.5 MHz Tone Spacing

−20

−30

1500 mA

1150 mA

900 mA

= 1700 mA

900 mA

600 mA

−40

−50

−60

= 28 Vdc

f1 = 1958.75 MHz, f2 = 1961.25 MHz

1150 mA

1500 mA

Two−Tone Measurements, 2.5 MHz Tone Spacing

100

400

P , OUTPUT POWER (WATTS) PEP

out

100

1000

, OUTPUT POWER (WATTS) PEP

out

Figure 5. Two-Tone Power Gain versus

Output Power

Figure 6. Third Order Intermodulation Distortion

versus Output Power

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

1 2 3 456 7 8...11

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