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MRF6S19140HR3_07 PDF预览

MRF6S19140HR3_07

更新时间: 2024-01-13 02:02:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
11页 405K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S19140HR3_07 数据手册

 浏览型号MRF6S19140HR3_07的Datasheet PDF文件第2页浏览型号MRF6S19140HR3_07的Datasheet PDF文件第3页浏览型号MRF6S19140HR3_07的Datasheet PDF文件第4页浏览型号MRF6S19140HR3_07的Datasheet PDF文件第6页浏览型号MRF6S19140HR3_07的Datasheet PDF文件第7页浏览型号MRF6S19140HR3_07的Datasheet PDF文件第8页 
TYPICAL CHARACTERISTICS  
20  
40  
η
D
18  
16  
14  
12  
10  
8
30  
20  
10  
G
ps  
V
= 28 Vdc, P = 29 W (Avg.), I = 1150 mA  
out DQ  
DD  
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,  
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB  
@ 0.01% Probability (CCDF)  
0
−10  
−12  
−14  
−16  
−18  
−20  
−22  
−24  
−26  
−28  
−30  
−10  
−20  
−40  
IRL  
IM3  
6
4
−60  
ACPR  
−80  
2
0
−100  
1910 1920 1930 1940 1950 1960 1970 1980 1990 2000  
f, FREQUENCY (MHz)  
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 29 Watts Avg.  
18  
50  
η
D
16  
14  
12  
10  
40  
G
V
= 28 Vdc, P = 75 W (Avg.), I = 1150 mA  
out DQ  
ps  
DD  
30  
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,  
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB  
@ 0.01% Probability (CCDF)  
20  
−10  
−12  
−14  
−16  
−18  
−20  
−22  
−24  
−26  
−28  
−30  
0
IRL  
−20  
−40  
−60  
−80  
8
6
4
2
IM3  
ACPR  
1910 1920 1930 1940 1950 1960 1970 1980 1990 2000  
f, FREQUENCY (MHz)  
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 75 Watts Avg.  
18  
10  
V
= 28 Vdc  
f1 = 1958.75 MHz, f2 = 1961.25 MHz  
DD  
I
= 1700 mA  
DQ  
17  
16  
15  
14  
TwoTone Measurements, 2.5 MHz Tone Spacing  
20  
30  
1500 mA  
1150 mA  
900 mA  
I
= 1700 mA  
DQ  
900 mA  
600 mA  
600 mA  
40  
50  
−60  
V
= 28 Vdc  
f1 = 1958.75 MHz, f2 = 1961.25 MHz  
DD  
13  
12  
1150 mA  
1500 mA  
TwoTone Measurements, 2.5 MHz Tone Spacing  
1
10  
100  
400  
1
10  
P , OUTPUT POWER (WATTS) PEP  
out  
100  
1000  
P
, OUTPUT POWER (WATTS) PEP  
out  
Figure 5. Two-Tone Power Gain versus  
Output Power  
Figure 6. Third Order Intermodulation Distortion  
versus Output Power  
MRF6S19140HR3 MRF6S19140HSR3  
RF Device Data  
Freescale Semiconductor  
5

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