Document Number: MRF6S19100H
Rev. 3, 8/2005
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HR3
MRF6S19100HSR3
Designed for N-CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 900 mA,
P
out = 22 Watts Avg., Full Frequency Band, IS-95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
1990 MHz, 22 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — -37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc @ 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Input and Output Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 465-06, STYLE 1
NI-780
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
MRF6S19100HR3
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• Pb-Free and RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465A-06, STYLE 1
NI-780S
MRF6S19100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
-0.5, +68
-0.5, +12
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
398
2.3
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
CW Operation
T
- 65 to +150
200
°C
°C
W
stg
T
J
CW
100
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
R
θ
JC
°C/W
0.44
0.50
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6S19100HR3 MRF6S19100HSR3
RF Device Data
Freescale Semiconductor
1