Datasheet > MRF6S19100HR3_06

MRF6S19100HR3_06

更新时间： 2024-02-04 14:31:00

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	428K
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S19100HR3_06 数据手册

Document Number: MRF6S19100H

Rev. 4, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S19100HR3

MRF6S19100HSR3

Designed for N-CDMA base station applications with frequencies from 1930

to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ= 900 mA,

_out= 22 Watts Avg., Full Frequency Band, IS-95 (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

1930-1990 MHz, 22 W AVG., 28 V

2 x N-CDMA

Power Gain — 16.1 dB

Drain Efficiency — 28%

IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 465-06, STYLE 1

NI-780

• Lower Thermal Resistance Package

MRF6S19100HR3

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF6S19100HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +68

-0.5, +12

Total Device Dissipation @ T = 25°C

Derate above 25°C

398

2.3

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 77°C, 22 W CW

°C/W

0.44

0.50

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S19100HR3 MRF6S19100HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF6S19100HR3_06相关器件

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MRF6S19100HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19100N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19100NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19100NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19120H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19120HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19120HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19140HR3	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19140HR3_07	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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