Datasheet > MRF6S18060NR1

MRF6S18060NR1

更新时间： 2024-01-25 23:38:33

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RF Power Field Effect Transistors

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MRF6S18060NR1 数据手册

Document Number: MRF6S18060N

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with

frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and

multicarrier amplifier applications.

MRF6S18060NR1

MRF6S18060NBR1

GSM Application

• Typical GSM Performance: V_DD= 26 Vdc, I_DQ= 600 mA, P_out= 60 Watts

CW, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)

Power Gain — 15 dB

1800-2000 MHz, 60 W, 26 V

GSM/GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency - 50%

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 26 Volts, I_DQ= 450 mA,

_out= 25 Watts Avg., Full Frequency Band (1805-1880 MHz or

1930-1990 MHz)

Power Gain — 15.5 dB

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -76 dBc

EVM — 2% rms

CASE 1486-03, STYLE 1

TO-270 WB-4

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW

Output Power

PLASTIC

MRF6S18060NR1

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S18060NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +68

-0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

216

1.2

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +175

200

°C

stg

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 60 W CW

Case Temperature 77°C, 25 W CW

°C/W

0.81

0.95

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S18060NR1 MRF6S18060NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...20

中文翻译

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与MRF6S18060NR1相关器件

型号	品牌	获取价格	描述	数据表
MRF6S18060NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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MRF6S18140HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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MRF6S18140HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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MRF6S19060NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19060NR1	FREESCALE	获取价格	RF Power Field Effect Transistors

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