Datasheet > MRF6S18100NR1_08

MRF6S18100NR1_08

更新时间： 2022-11-24 14:11:44

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S18100NR1_08 数据手册

Document Number: MRF6S18100N

Rev. 2, 12/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with

frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and

multicarrier amplifier applications.

MRF6S18100NR1

MRF6S18100NBR1

GSM Application

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 900 mA,

P_out= 100 Watts, f = 1990 MHz

1805-1990 MHz, 100 W, 28 V

GSM/GSM EDGE

Power Gain — 14.5 dB

Drain Efficiency — 49%

GSM EDGE Application

LATERAL N-CHANNEL

RF POWER MOSFETs

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 700 mA,

P_out= 40 Watts Avg., Full Frequency Band (1805-1880 MHz or

1930-1990 MHz)

Power Gain — 15 dB

Drain Efficiency — 35%

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -76 dBc

EVM — 2% rms

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW

CASE 1486-03, STYLE 1

TO-270 WB-4

Output Power

Features

MRF6S18100NR1

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

MRF6S18100NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 CW

Case Temperature 77°C, 40 CW

°C/W

0.51

0.62

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S18100NR1 MRF6S18100NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...21

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