Datasheet > MRF6S18140HR3

MRF6S18140HR3

更新时间： 2024-01-25 01:55:19

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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S18140HR3 数据手册

Document Number: MRF6S18140H

Rev. 0, 9/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA base station applications with frequencies from 1805

to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF6S18140HR3

MRF6S18140HSR3

• Typical 2-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ= 1200 mA,

P_out= 29 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync,

Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB

1805-1880 MHz, 29 W AVG., 28 V

2 x N-CDMA

Drain Efficiency — 27.5%

LATERAL N-CHANNEL

RF POWER MOSFETs

IM3 @ 2.5 MHz Offset — -36 dBc in 1.2288 MHz Bandwidth

ACPR @ 885 kHz Offset — -50.5 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 465B-03, STYLE 1

NI-880

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

MRF6S18140HR3

Applications

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF6S18140HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 140 W CW

Case Temperature 73°C, 29 W CW

°C/W

0.31

0.35

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S18140HR3 MRF6S18140HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF6S18140HR3相关器件

型号	品牌	获取价格	描述	数据表
MRF6S18140HR3_09	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19060N	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19060NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
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MRF6S19100HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S19100HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors

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