Document Number: MRF6S18100N
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and
multicarrier amplifier applications.
MRF6S18100NR1
MRF6S18100NBR1
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout
=
100 Watts, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)
Power Gain — 14.5 dB
1805-1990 MHz, 100 W, 28 V
GSM/GSM EDGE
Drain Efficiency — 49%
LATERAL N-CHANNEL
RF POWER MOSFETs
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
Pout = 40 Watts Avg., Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
Power Gain — 15 dB
Drain Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -76 dBc
EVM — 2% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
CASE 1486-03, STYLE 1
TO-270 WB-4
Output Power
Features
MRF6S18100NR1
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1484-04, STYLE 1
TO-272 WB-4
MRF6S18100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
-0.5, +68
-0.5, +12
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
343
1.96
W
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +175
200
°C
°C
stg
T
J
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 CW
Case Temperature 77°C, 40 CW
R
°C/W
θ
JC
0.51
0.62
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S18100NR1 MRF6S18100NBR1
RF Device Data
Freescale Semiconductor
1