Datasheet > MRF6S18060MBR1

MRF6S18060MBR1

更新时间： 2024-01-11 18:53:32

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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S18060MBR1 数据手册

Document Number: MRF6S18060

Rev. 2, 5/2006

Freescale Semiconductor

Technical Data

Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with

this part replacement. N suffix added to part number to indicate transition to lead-free

terminations.

MRF6S18060MR1

MRF6S18060MBR1

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with

frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and

multicarrier amplifier applications.

1800-2000 MHz, 60 W, 26 V

GSM/GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

GSM Application

• Typical GSM Performance: V_DD= 26 Vdc, I_DQ= 600 mA, P_out= 60 Watts

CW, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)

Power Gain — 15 dB

Drain Efficiency - 50%

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 26 Volts, I_DQ= 450 mA,

CASE 1486-03, STYLE 1

TO-270 WB-4

_out= 25 Watts Avg., Full Frequency Band (1805-1880 MHz or

1930-1990 MHz)

PLASTIC

MRF6S18060MR1

Power Gain — 15.5 dB

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -76 dBc

EVM — 2% rms

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW

Output Power

CASE 1484-04, STYLE 1

TO-272 WB-4

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

PLASTIC

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

MRF6S18060MBR1

• 200°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +68

-0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

216

1.2

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +175

200

°C

stg

Table 2. Thermal Characteristics

(1)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 60 W CW

Case Temperature 77°C, 25 W CW

°C/W

0.81

0.95

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6S18060MR1 MRF6S18060MBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...20

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与MRF6S18060MBR1相关器件

型号	品牌	获取价格	描述	数据表
MRF6S18060NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S18060NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF6S18060NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NR1_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3_09	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19060N	FREESCALE	获取价格	RF Power Field Effect Transistors

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