Datasheet > MRF6P24190HR6_08

MRF6P24190HR6_08

更新时间： 2024-10-01 04:14:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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RF Power Field Effect Transistor

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MRF6P24190HR6_08 数据手册

Document Number: MRF6P24190H

Rev. 2, 4/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed primarily for large-signal output applications at 2450 MHz. Device

is suitable for use in industrial, medical and scientific applications.

MRF6P24190HR6

• Typical CW Performance at 2450 MHz, V_DD= 28 Volts, I_DQ= 1900 mA,

P_out= 190 Watts

Power Gain — 13.2 dB

Drain Efficiency — 46.2%

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW

2450 MHz, 190 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFET

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

CASE 375D-05, STYLE 1

NI-1230

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

CW Operation @ T = 25°C

Derate above 25°C

250

1.3

W/°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 100°C, 160 W CW

Case Temperature 83°C, 40 W CW

°C/W

0.22

0.24

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6P24190HR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...9

中文翻译

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与MRF6P24190HR6_08相关器件

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MRF6P27160HR6_06	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P3300H	FREESCALE	获取价格	RF Power Field Effect Transistor
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MRF6P3300HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistor
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