Datasheet > MRF6P27160H_08

MRF6P27160H_08

更新时间： 2024-01-18 02:00:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
11页	492K
描述
RF Power Field Effect Transistor

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数据手册

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MRF6P27160H_08 数据手册

Document Number: MRF6P27160H

Rev. 2, 12/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 2600 to

2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

To be used in Class AB and Class C for WLL applications.

MRF6P27160HR6

• Typical Single-Carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ

1800 mA, P_out= 35 Watts Avg., f = 2660 MHz, IS-95 CDMA (Pilot, Sync,

Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 14.6 dB

Drain Efficiency — 22.6%

ACPR @ 885 kHz Offset — -47.8 dBc in 30 kHz Bandwidth

2600-2700 MHz, 35 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFET

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

CASE 375D-05, STYLE 1

NI-1230

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 79°C, 160 W CW

Case Temperature 71°C, 35 W CW

°C/W

0.29

0.31

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6P27160HR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

中文翻译

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与MRF6P27160H_08相关器件

型号	品牌	获取价格	描述	数据表
MRF6P27160HR5	NXP	获取价格	RF POWER, FET
MRF6P27160HR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160HR6_06	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P3300H	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6P3300HR3	FREESCALE	获取价格	RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
MRF6P3300HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6P3300HR5	FREESCALE	获取价格	RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
MRF6P9220HR3	FREESCALE	获取价格	880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
MRF6P9220HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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