Datasheet > MRF6P21190HR6

MRF6P21190HR6

更新时间： 2024-09-30 21:54:47

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	399K
描述
RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET

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MRF6P21190HR6 数据手册

Document Number: MRF6P21190HR6

Rev. 2, 8/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF6P21190HR6

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ

2 x 950 mA, P_out= 44 Watts Avg., Full Frequency Band, Channel

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 15.5 dB

2170 MHz, 44 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFET

Drain Efficiency — 26.5%

IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -40 dBc @ 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• Pb-Free and RoHS Compliant

CASE 375D-05, STYLE 1

NI-1230

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +68

-0.5, +12

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

700

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

- 65 to +150

200

°C

stg

190

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 190 W CW

Case Temperature 72°C, 44 W CW

°C/W

0.25

0.27

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6P21190HR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF6P21190HR6相关器件

型号	品牌	获取价格	描述	数据表
MRF6P21190HR6_06	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6P23190H_08	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6P23190HR5	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,68V V(BR)DSS,SOT-494AVAR
MRF6P23190HR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P24190HR5	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,68V V(BR)DSS,SOT-494A
MRF6P24190HR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P24190HR6_08	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6P27160H	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H_06	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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