Datasheet > MRF6P23190HR5

MRF6P23190HR5

更新时间： 2024-10-01 19:52:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	425K
描述
TRANSISTOR,MOSFET,N-CHANNEL,68V V(BR)DSS,SOT-494AVAR

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MRF6P23190HR5 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.82	Base Number Matches：	1

MRF6P23190HR5 数据手册

Document Number: MRF6P23190H

Rev. 3, 12/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 2300 to

2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

To be used in Class AB and Class C for WLL applications.

MRF6P23190HR6

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 1900 mA,

_out= 40 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14 dB

2300-2400 MHz, 40 W AVG., 28 V

2 x W-CDMA

Drain Efficiency — 23.5%

IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFET

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

CASE 375D-05, STYLE 1

NI-1230

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

CW Operation @ T = 25°C

Derate above 25°C

250

1.3

W/°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 100°C, 160 W CW

Case Temperature 83°C, 40 W CW

°C/W

0.22

0.24

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6P23190HR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

中文翻译

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与MRF6P23190HR5相关器件

型号	品牌	获取价格	描述	数据表
MRF6P23190HR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P24190HR5	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,68V V(BR)DSS,SOT-494A
MRF6P24190HR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P24190HR6_08	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6P27160H	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H_06	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H_08	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6P27160HR5	NXP	获取价格	RF POWER, FET
MRF6P27160HR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160HR6_06	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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