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MRF653S

更新时间: 2024-10-01 13:01:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频双极晶体管放大器
页数 文件大小 规格书
6页 168K
描述
UHF BAND, Si, NPN, RF POWER TRANSISTOR

MRF653S 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CRDB-F4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.65
最大集电极电流 (IC):2.75 A基于收集器的最大容量:28 pF
集电极-发射极最大电压:16.5 V配置:SINGLE
最小直流电流增益 (hFE):20最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-CRDB-F4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:NPN
最小功率增益 (Gp):7 dB认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF653S 数据手册

 浏览型号MRF653S的Datasheet PDF文件第2页浏览型号MRF653S的Datasheet PDF文件第3页浏览型号MRF653S的Datasheet PDF文件第4页浏览型号MRF653S的Datasheet PDF文件第5页浏览型号MRF653S的Datasheet PDF文件第6页 
Order this document  
by MRF653/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial  
and commercial FM equipment operating to 512 MHz.  
Specified 12.5 Volt, 512 MHz Characteristics  
Output Power = 10 W  
10 W, 512 MHz  
Gain = 8.0 dB (Typ)  
Efficiency = 65% (Typ)  
RF POWER  
TRANSISTOR  
NPN SILICON  
Gold Metallized, Emitter Ballasted for Long Life and Reliability  
Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage  
Circuit board photomaster available upon request by contacting  
RF Tactical Marketing in Phoenix, AZ.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
16.5  
38  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
V
CEO  
V
CBO  
V
EBO  
4.0  
I
C
2.75  
CASE 244–04, STYLE 1  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
44  
0.25  
Watts  
W/°C  
A
Storage Temperature Range  
Operating Junction Temperature  
T
65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
°C/W  
Thermal Resistance, Junction to Case  
R
4.0  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = 20 mAdc, I = 0)  
V
16.5  
38  
Vdc  
Vdc  
C
B
(BR)CEO  
Collector–Emitter Breakdown Voltage (I = 20 mAdc, V  
= 0)  
V
C
BE  
(BR)CES  
(BR)EBO  
Emitter–Base Breakdown Voltage (I = 5.0 mAdc, I = 0)  
V
4.0  
Vdc  
E
C
Collector Cutoff Current (V  
CE  
= 15 Vdc, V  
= 0)  
I
5.0  
mAdc  
BE  
CES  
ON CHARACTERISTICS  
DC Current Gain (I = 1.0 Adc, V  
CE  
= 5.0 Vdc)  
h
20  
120  
28  
C
FE  
DYNAMIC CHARACTERISTICS  
Output Capacitance (V  
CB  
= 12.5 Vdc, I = 0, f = 1.0 MHz)  
C
22  
pF  
E
ob  
pe  
FUNCTIONAL TESTS  
Common–Emitter Amplifier Power Gain  
G
7.0  
55  
8.0  
65  
dB  
%
(V  
CC  
= 12.5 Vdc, P  
= 10 W, f = 512 MHz)  
out  
out  
Collector Efficiency  
(V = 12.5 Vdc, P  
η
c
= 10 W, f = 512 MHz)  
CC  
Load Mismatch Stress  
(V = 16 Vdc, f = 512 MHz, P (1) = 2.6 W,  
ψ
No Degradation in Output Power  
CC in  
VSWR = 20:1, All Phase Angles)  
NOTE:  
1. P = 2.0 dB over the typical input power required for 10 W output power @ 12.5 Vdc.  
in  
REV 8  
Motorola, Inc. 1997  

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