Order this document
by MRF658/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier
applications in industrial and commercial FM equipment operating to 520 MHz.
•
Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 65 Watts
Minimum Gain = 4.15 dB
65 W, 512 MHz
Minimum Efficiency = 50%
RF POWER TRANSISTOR
NPN SILICON
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
from 400 to 520 MHz
•
•
•
•
•
Built–In Matching Network for Broadband Operation
Triple Ion Implanted for More Consistent Characteristics
Implanted Emitter Ballast Resistors for Improved Ruggedness
Silicon Nitride Passivated
Capable of Surviving Load Mismatch Stress at all Phase Angles with
20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive
CASE 316–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
16.5
38
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
V
CEO
V
CES
EBO
V
4.0
Collector Current — Continuous
I
C
15
Total Device Dissipation @ T = 25°C
P
D
175
1.0
Watts
W/°C
C
Derate above 25°C
Storage Temperature Range
T
stg
– 65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
Symbol
Max
Unit
R
1.0
°C/W
θJC
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, I = 0)
V
16.5
38
29
45
—
—
—
10
Vdc
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, V = 0)
V
(BR)CES
(BR)EBO
C
BE
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
4.0
—
4.6
0.1
E
C
Collector Cutoff Current
(V = 15 Vdc, V
I
mAdc
CES
= 0, T = 25°C)
CE
BE
C
(continued)
REV 7
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF658
1