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MRF658 PDF预览

MRF658

更新时间: 2024-02-09 08:03:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
6页 98K
描述
RF POWER TRANSISTOR NPN SILICON

MRF658 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):15 A
配置:Single最小直流电流增益 (hFE):40
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):175 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

MRF658 数据手册

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Order this document  
by MRF658/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier  
applications in industrial and commercial FM equipment operating to 520 MHz.  
Specified 12.5 Volt, 512 MHz Characteristics  
Output Power = 65 Watts  
Minimum Gain = 4.15 dB  
65 W, 512 MHz  
Minimum Efficiency = 50%  
RF POWER TRANSISTOR  
NPN SILICON  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
from 400 to 520 MHz  
Built–In Matching Network for Broadband Operation  
Triple Ion Implanted for More Consistent Characteristics  
Implanted Emitter Ballast Resistors for Improved Ruggedness  
Silicon Nitride Passivated  
Capable of Surviving Load Mismatch Stress at all Phase Angles with  
20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive  
CASE 316–01, STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
16.5  
38  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
CEO  
V
CES  
EBO  
V
4.0  
Collector Current — Continuous  
I
C
15  
Total Device Dissipation @ T = 25°C  
P
D
175  
1.0  
Watts  
W/°C  
C
Derate above 25°C  
Storage Temperature Range  
T
stg  
– 65 to +150  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
Symbol  
Max  
Unit  
R
1.0  
°C/W  
θJC  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 50 mAdc, I = 0)  
V
16.5  
38  
29  
45  
10  
Vdc  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Emitter Breakdown Voltage  
(I = 50 mAdc, V = 0)  
V
(BR)CES  
(BR)EBO  
C
BE  
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
4.0  
4.6  
0.1  
E
C
Collector Cutoff Current  
(V = 15 Vdc, V  
I
mAdc  
CES  
= 0, T = 25°C)  
CE  
BE  
C
(continued)  
REV 7  
Motorola, Inc. 1997  

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