Datasheet > MRF6522-70R3_08

MRF6522-70R3_08

更新时间： 2022-12-24 08:11:58

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
10页	336K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF6522-70R3_08 数据手册

TYPICAL CHARACTERISTICS

17.5

17.0

16.5

16.0

18.0

= 600 mA

17.8

17.6

17.4

17.2

17.0

16.8

16.6

16.4

500 mA

400 mA

500 mA

400 mA

300 mA

200 mA

300 mA

= 26 Vdc

f = 921 MHz

= 26 Vdc

15.5

15.0

f = 960 MHz

16.2

16.0

100

, OUTPUT POWER (WATTS)

out

, OUTPUT POWER (WATTS)

out

Figure 3. Power Gain versus Output Power

Figure 4. Power Gain versus Output Power

105

115

105

= 5.0 W

4.0 W

= 5.0 W

3.0 W

4.0 W

3.0 W

2.0 W

= 400 mA

f = 960 MHz

f = 921 MHz

18 19

26 27

18 19

V , SUPPLY VOLTAGE (VOLTS)

26 27

, SUPPLY VOLTAGE (VOLTS)

Figure 5. Output Power versus Supply Voltage

Figure 6. Output Power versus Supply Voltage

out

= 26 Vdc

= 400 mA

f = 921 MHz

0.5

1.0

1.5

2.0

P , INPUT POWER (WATTS)

Figure 7. Efficiency and Output Power

versus Input Power

MRF6522--70R3

RF Device Data

Freescale Semiconductor

1 2 345 6 7...10

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