Datasheet > MRF6522-70R3_06

MRF6522-70R3_06

更新时间： 2024-01-11 01:12:54

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	333K
描述
RF Power Field Effect Transistor

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数据手册

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MRF6522-70R3_06 数据手册

Document Number: MRF6522-70

Rev. 8, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for GSM 900 frequency band, the high gain and broadband

performance of this device make it ideal for large-signal, common source

amplifier applications in 26 volt base station equipment.

MRF6522-70R3

• Specified Performance @ Full GSM Band, 921-960 MHz, 26 Volts

Output Power, P1dB — 80 Watts (Typ)

Power Gain @ P1dB — 16 dB (Typ)

Efficiency @ P1dB — 58% (Typ)

921-960 MHz, 70 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFET

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output

Power

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

CASE 465D-05, STYLE 1

NI-600

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

Unit

Vdc

Adc

Drain-Source Voltage

Gate-Source Voltage

Drain Current — Continuous

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

159

0.9

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value

Unit

1.1

°C/W

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6522-70R3

4-1

Freescale Semiconductor

RF Product Device Data

12 3 4 5 6 7...12

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