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MRF6522-70 PDF预览

MRF6522-70

更新时间: 2024-01-30 17:52:02
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管功率场效应晶体管放大器局域网
页数 文件大小 规格书
8页 511K
描述
RF Power Field Effect Transistor

MRF6522-70 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.65Base Number Matches:1

MRF6522-70 数据手册

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MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF6522-70/D  
The RF MOSFET Line  
RF Power Field Effect Transistor  
N-Channel Enhancement-Mode Lateral MOSFET  
MRF6522−70R3  
Designed for GSM 900 frequency band, the high gain and broadband  
performance of this device make it ideal for large-signal, common source  
amplifier applications in 26 volt base station equipment.  
Specified Performance @ Full GSM Band, 921-960 MHz, 26 Volts  
Output Power, P1dB — 80 Watts (Typ)  
921 - 960 MHz, 70 W, 26 V  
LATERAL N-CHANNEL  
RF POWER MOSFET  
Power Gain @ P1dB — 16 dB (Typ)  
Efficiency @ P1dB — 58% (Typ)  
Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.  
CASE 465D-05, STYLE 1  
NI-600  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Adc  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current — Continuous  
V
DSS  
V
20  
GS  
I
7
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
159  
0.9  
Watts  
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value  
Unit  
R
θ
JC  
1.1  
°C/W  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 6  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 

MRF6522-70 替代型号

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