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MRF6522-70 PDF预览

MRF6522-70

更新时间: 2024-11-12 05:50:11
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页数 文件大小 规格书
12页 333K
描述
RF Power Field Effect Transistor

MRF6522-70 数据手册

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Document Number: MRF6522-70  
Rev. 8, 5/2006  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistor  
N-Channel Enhancement-Mode Lateral MOSFET  
Designed for GSM 900 frequency band, the high gain and broadband  
performance of this device make it ideal for large-signal, common source  
amplifier applications in 26 volt base station equipment.  
MRF6522-70R3  
Specified Performance @ Full GSM Band, 921-960 MHz, 26 Volts  
Output Power, P1dB — 80 Watts (Typ)  
Power Gain @ P1dB — 16 dB (Typ)  
Efficiency @ P1dB — 58% (Typ)  
921-960 MHz, 70 W, 26 V  
LATERAL N-CHANNEL  
RF POWER MOSFET  
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output  
Power  
RoHS Compliant  
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.  
CASE 465D-05, STYLE 1  
NI-600  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-0.5, +65  
20  
Unit  
Vdc  
Vdc  
Adc  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current — Continuous  
V
DSS  
V
GS  
I
7
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
159  
0.9  
W
W/°C  
C
D
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
- 65 to +150  
150  
°C  
°C  
°C  
stg  
T
C
T
200  
J
Table 2. Thermal Characteristics  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value  
Unit  
R
θ
JC  
1.1  
°C/W  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
© Freescale Semiconductor, Inc., 2006. All rights reserved.  

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