Datasheet > MRF5S9101MR1

MRF5S9101MR1

更新时间： 2024-11-11 21:55:35

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描述
RF Power Field Effect Transistors

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MRF5S9101MR1 数据手册

Document Number: MRF5S9101

Rev. 2, 7/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF5S9101NR1

MRF5S9101NBR1

MRF5S9101MR1

MRF5S9101MBR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with

frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier

applications.

GSM Application

• Typical GSM Performance: V_DD= 26 Volts, I_DQ= 700 mA, P_out

100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain - 17.5 dB

Drain Efficiency - 60%

GSM EDGE Application

869-960 MHz, 100 W, 26 V

GSM/GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 650 mA, P_out

50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain — 18 dB

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 2.3% rms

• Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,

@ f = 960 MHz

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF5S9101NR1(MR1)

• N Suffix Indicates Lead-Free Terminations

• 200°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-02, STYLE 1

TO-272 WB-4

PLASTIC

MRF5S9101NBR1(MBR1)

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

- 0.5, +68

- 0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

427

2.44

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 80°C, 50 W CW

°C/W

0.41

0.47

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

中文翻译

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与MRF5S9101MR1相关器件

型号	品牌	获取价格	描述	数据表
MRF5S9101NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9101NBR1	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF5S9101NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9101NR1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, PLASTIC, CASE 1486-03, 4 PIN
MRF5S9150HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S9150HR3_09	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF5S9150HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6.3	BEL	获取价格	Fast Acting Radial Lead Micro Fuse Series
MRF6.3AMMO	BEL	获取价格	暂无描述
MRF604	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-

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