Datasheet > MRF5S21150SR3

MRF5S21150SR3

更新时间： 2024-10-01 10:47:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	557K
描述
RF POWER FIELD EFFECT TRANSISTORS

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MRF5S21150SR3 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF5S21150/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S21150R3

MRF5S21150SR3

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts,

I_DQ= 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =

3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz

and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW

@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability

on CCDF.

2170 MHz, 33 W AVG.,

2 x W-CDMA, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Output Power — 33 Watts Avg.

Power Gain — 12.5 dB

Efficiency — 25%

IM3 — -37 dBc

ACPR — -39 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465B-03, STYLE 1

NI-880

• Designed for Maximum Gain and Insertion Phase Flatness

MRF5S21150R3

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Qualified Up to a Maximum of 32 V_DDOperation

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF5S21150SR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

367

2.1

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

- 65 to +150

200

°C

stg

125

Watts

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value (1)(2)

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 125 W CW

Case Temperature 80°C, 33 W CW

0.47

0.53

(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 2

MOTOROLA RF DEVICE DATA

MRF5S21150R3 MRF5S21150SR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

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