Datasheet > MRF5S9080NBR1,528

MRF5S9080NBR1,528

更新时间： 2024-11-16 07:19:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	812K
描述
RF Power Field-Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF5S9080NBR1,528 数据手册

浏览型号MRF5S9080NBR1,528的Datasheet PDF文件第2页

浏览型号MRF5S9080NBR1,528的Datasheet PDF文件第3页

浏览型号MRF5S9080NBR1,528的Datasheet PDF文件第4页

浏览型号MRF5S9080NBR1,528的Datasheet PDF文件第5页

浏览型号MRF5S9080NBR1,528的Datasheet PDF文件第6页

浏览型号MRF5S9080NBR1,528的Datasheet PDF文件第7页

Document Number: MRF5S9080N

Rev. 1, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with

frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier

amplifier applications.

MRF5S9080NR1

MRF5S9080NBR1

GSM Application

• Typical GSM Performance: V_DD= 26 Volts, I_DQ= 600 mA, P_out= 80 Watts

CW, Full Frequency Band (869-894 MHz or 921-960 MHz).

Power Gain — 18.5 dB

869-960 MHz, 80 W, 26 V

GSM/GSM EDGE

Drain Efficiency — 60%

LATERAL N-CHANNEL

RF POWER MOSFETs

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 26 Volts, I_DQ= 550 mA,

P_out= 36 Watts Avg., Full Frequency Band (869-894 MHz or

921-960 MHz).

Power Gain — 19 dB

Drain Efficiency — 42%

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 2.5% rms

CASE 1486-03, STYLE 1

TO-270 WB-4

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW

Output Power

Features

PLASTIC

MRF5S9080NR1

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• 200_C Capable Plastic Package

• RoHS Compliant

CASE 1484-04, STYLE 1

TO-272 WB-4

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

PLASTIC

MRF5S9080NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

-0.5, +15

- 65 to +150

200

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

DSS

Storage Temperature Range

Operating Junction Temperature

stg

°C

Table 2. Thermal Characteristics

Characteristic

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 79°C, 80 W CW

Case Temperature 80°C, 36 W CW

°C/W

0.50

0.54

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF5S9080NR1 MRF5S9080NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...20

中文翻译

下载PDF

与MRF5S9080NBR1,528相关器件

型号	品牌	获取价格	描述	数据表
MRF5S9080NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9100MBR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S9100MR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S9100NBR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S9100NR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S9101MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9101MBR1	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF5S9101MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S9101MR1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, PLASTIC, CASE 1486-03, 4 PIN
MRF5S9101NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors

与MRF5S9080NBR1,528相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

6
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

3
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF5S9080NBR1,528

MRF5S9080NBR1,528 数据手册

与MRF5S9080NBR1,528相关器件

与MRF5S9080NBR1,528相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF5S9080NBR1,528

MRF5S9080NBR1,528 数据手册

与MRF5S9080NBR1,528相关器件

与MRF5S9080NBR1,528相关文章

您还可以找

您在本页遇到什么问题？