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MRF5S21090L PDF预览

MRF5S21090L

更新时间： 2024-09-30 22:31:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
12页 582K
描述
RF Power Field Effect Transistors

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MRF5S21090L 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
风险等级：5.65外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：S BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：224 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

MRF5S21090L 数据手册

 浏览型号MRF5S21090L的Datasheet PDF文件第2页浏览型号MRF5S21090L的Datasheet PDF文件第3页浏览型号MRF5S21090L的Datasheet PDF文件第4页浏览型号MRF5S21090L的Datasheet PDF文件第5页浏览型号MRF5S21090L的Datasheet PDF文件第6页浏览型号MRF5S21090L的Datasheet PDF文件第7页 
MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF5S21090L/D  
The RF MOSFET Line  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF5S21090LR3  
MRF5S21090LSR3  
Designed for W-CDMA base station applications with frequencies from 2110  
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-  
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL  
applications.  
2170 MHz, 19 W AVG.,  
2 x W-CDMA, 28 V  
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts,  
IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =  
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz  
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW  
@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability  
on CCDF.  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Output Power — 19 Watts Avg.  
Power Gain — 14.5 dB  
Efficiency — 26%  
IM3 — -37.5 dBc  
ACPR — -40.5 dBc  
CASE 465-06, STYLE 1  
NI-780  
• Internally Matched, Controlled Q, for Ease of Use  
• High Gain, High Efficiency and High Linearity  
• Integrated ESD Protection  
MRF5S21090LR3  
• Designed for Maximum Gain and Insertion Phase Flatness  
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW  
Output Power  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Qualified Up to a Maximum of 32 VDD Operation  
CASE 465A-06, STYLE 1  
NI-780S  
MRF5S21090LSR3  
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
GS  
-0.5, +15  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
224  
1.28  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value (1,2)  
Unit  
Thermal Resistance, Junction to Case  
R
°C/W  
θ
JC  
Case Temperature 80°C, 90 W CW  
Case Temperature 80°C, 19 W CW  
0.78  
0.80  
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to  
access the MTTF calculators by product.  
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.  
Select Documentation/Application Notes - AN1955.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 1  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
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MRF5S21090LR3 MOTOROLA

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MRF5S21090LSR3 MOTOROLA

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MRF5S21100HR3 FREESCALE

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 		To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21100HSR3 FREESCALE

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 		To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21100LR3 MOTOROLA

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 		The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3 MOTOROLA

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 		The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3 NXP

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 		S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780S, CASE 465A-06, 2 PIN
MRF5S21130 MOTOROLA

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 		The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130HR3 FREESCALE

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 		To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21130HSR3 FREESCALE

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 		To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

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