Datasheet > MRF5S21100HR3

MRF5S21100HR3

更新时间： 2024-11-13 22:31:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管过程控制系统个人通信 PCS 放大器 PCN WLL 局域网
页数	文件大小	规格书
12页	377K
描述
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

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MRF5S21100HR3 数据手册

MRF5S21100H

Rev. 2, 1/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S21100HR3

MRF5S21100HSR3

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 1050 mA,

P_out= 23 Watts Avg., Full Frequency Band, Channel Bandwidth =

3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 13.5 dB

2170 MHz, 23 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 26%

IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -40 dBc @ 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465-06, STYLE 1

NI-780

MRF5S21100HR3

CASE 465A-06, STYLE 1

NI-780S

MRF5S21100HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

273

1.56

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

Characteristic

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 78°C, 23 W CW

°C/W

0.57

0.64

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF5S21100HR3 MRF5S21100HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF5S21100HR3相关器件

型号	品牌	获取价格	描述	数据表
MRF5S21100HSR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21100LR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780S, CASE 465A-06, 2 PIN
MRF5S21130	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21130HSR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21130R3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130S	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130SR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS

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