Datasheet > MRF5S21100LSR3

MRF5S21100LSR3

更新时间： 2024-09-30 21:55:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		射频
页数	文件大小	规格书
12页	565K
描述
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs

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MRF5S21100LSR3 技术参数

生命周期：	Transferred	包装说明：	FLATPACK, R-CDFP-F2
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.15	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	65 V
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	S BAND
JESD-30 代码：	R-CDFP-F2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	200 °C	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLATPACK
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	250 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

MRF5S21100LSR3 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF5S21100L/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S21100LR3

MRF5S21100LSR3

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts,

I_DQ= 1050 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =

3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz

and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW

@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability

on CCDF.

2170 MHz, 23 W AVG.,

2 x W-CDMA, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Output Power — 23 Watts Avg.

Power Gain — 13.5 dB

Efficiency — 26%

IM3 — -37 dBc

ACPR — -40 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465-06, STYLE 1

NI-780

MRF5S21100LR3

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Qualified Up to a Maximum of 32 V_DDOperation

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF5S21100LSR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

250

1.43

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value (1)

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 100 W CW

Case Temperature 80°C, 23 W CW

0.70

0.76

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

MRF5S21100LR3 MRF5S21100LSR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

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与MRF5S21100LSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF5S21130	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21130HSR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21130R3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130S	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130SR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21150	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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