MRF5S21130SR3

更新时间： 2024-11-14 04:14:39

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	401K
描述
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

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MRF5S21130SR3 数据手册

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SEMICONDUCTOR TECHNICAL DATA

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by MRF5S21130/D

The RF MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFETs

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Designed for W–CDMA base station applications at frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN–PCS/cellular radio and WLL

applications.

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2170 MHz, 28 W AVG.,

2 x W–CDMA, 28 V

LATERAL N–CHANNEL

RF POWER MOSFETs

• Typical 2–carrier W–CDMA Performance for V_DD= 28 Volts,

I_DQ= 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =

3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz

and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW

@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability

on CCDF.

Output Power — 28 Watts Avg.

Power Gain — 13.5 dB

Efficiency — 26%

IM3 — –37 dBc

ACPR — –39 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465B–03, STYLE 1

NI–880

MRF5S21130

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Qualified Up to a Maximum of 32 V_DDOperation

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C–02, STYLE 1

NI–880S

MRF5S21130S

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

315

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

–65 to +150

°C

stg

200

Watts

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 0

MOTOROLA RF DEVICE DATA

MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3

 Motorola, Inc. 2002

12 3 4 5 6 7...12

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与MRF5S21130SR3相关器件

型号	品牌	获取价格	描述	数据表
MRF5S21150	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150R3	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150S	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150S	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150SR3	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS

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