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MRF5S21150 PDF预览

MRF5S21150

更新时间： 2024-11-13 22:31:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
12页 557K
描述
RF POWER FIELD EFFECT TRANSISTORS

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MRF5S21150 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：3Reach Compliance Code：unknown
风险等级：5.62外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：S BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：350 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

MRF5S21150 数据手册

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MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF5S21150/D  
The RF MOSFET Line  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF5S21150R3  
MRF5S21150SR3  
Designed for W-CDMA base station applications with frequencies from 2110  
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-  
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL  
applications.  
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts,  
IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =  
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz  
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW  
@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability  
on CCDF.  
2170 MHz, 33 W AVG.,  
2 x W-CDMA, 28 V  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Output Power — 33 Watts Avg.  
Power Gain — 12.5 dB  
Efficiency — 25%  
IM3 — -37 dBc  
ACPR — -39 dBc  
• Internally Matched, Controlled Q, for Ease of Use  
• High Gain, High Efficiency and High Linearity  
• Integrated ESD Protection  
CASE 465B-03, STYLE 1  
NI-880  
• Designed for Maximum Gain and Insertion Phase Flatness  
MRF5S21150R3  
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW  
Output Power  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Qualified Up to a Maximum of 32 VDD Operation  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465C-02, STYLE 1  
NI-880S  
MRF5S21150SR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
-0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
367  
2.1  
Watts  
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
CW Operation  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
CW  
125  
Watts  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value (1)(2)  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
°C/W  
Case Temperature 80°C, 125 W CW  
Case Temperature 80°C, 33 W CW  
0.47  
0.53  
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to  
access the MTTF calculators by product.  
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.  
Select Documentation/Application Notes - AN1955.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 2  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
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