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MRF5S21130HR3 PDF预览

MRF5S21130HR3

更新时间: 2024-09-30 22:31:31
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管过程控制系统个人通信PCS放大器PCNWLL局域网
页数 文件大小 规格书
12页 371K
描述
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

MRF5S21130HR3 数据手册

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MRF5S21130H  
Rev. 2, 1/2005  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF5S21130HR3  
MRF5S21130HSR3  
Designed for W-CDMA base station applications at frequencies from 2110  
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-  
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL  
applications.  
Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,  
P
out = 28 Watts Avg., Full Frequency Band, Channel Bandwidth =  
2170 MHz, 28 W AVG., 28 V  
2 x W-CDMA  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.  
Power Gain — 13.5 dB  
Efficiency — 26%  
IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth  
ACPR @ 5 MHz Offset — -39 dBc @ 3.84 MHz Channel Bandwidth  
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW  
Output Power  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
Internally Matched, Controlled Q, for Ease of Use  
Qualified Up to a Maximum of 32 VDD Operation  
Integrated ESD Protection  
Lower Thermal Resistance Package  
Low Gold Plating Thickness on Leads, 40µNominal.  
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465B-03, STYLE 1  
NI-880  
MRF5S21130HR3  
CASE 465C-02, STYLE 1  
NI-880S  
MRF5S21130HSR3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
-0.5, +65  
-0.5, +15  
DSS  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
372  
2.13  
W
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
CW Operation  
T
- 65 to +150  
°C  
°C  
W
stg  
T
200  
92  
J
CW  
Table 2. Thermal Characteristics  
(1,2)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 80°C, 92 W CW  
Case Temperature 76°C, 28 W CW  
R
θ
JC  
°C/W  
0.44  
0.47  
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access  
the MTTF calculators by product.  
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
Freescale Semiconductor, Inc., 2005. All rights reserved.  
 

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