MRF5S21130

更新时间： 2024-11-14 04:14:39

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	401K
描述
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

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中文翻译

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数据手册

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MRF5S21130 数据手册

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SEMICONDUCTOR TECHNICAL DATA

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by MRF5S21130/D

The RF MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFETs

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Designed for W–CDMA base station applications at frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN–PCS/cellular radio and WLL

applications.

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2170 MHz, 28 W AVG.,

2 x W–CDMA, 28 V

LATERAL N–CHANNEL

RF POWER MOSFETs

• Typical 2–carrier W–CDMA Performance for V_DD= 28 Volts,

I_DQ= 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =

3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz

and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW

@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability

on CCDF.

Output Power — 28 Watts Avg.

Power Gain — 13.5 dB

Efficiency — 26%

IM3 — –37 dBc

ACPR — –39 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465B–03, STYLE 1

NI–880

MRF5S21130

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Qualified Up to a Maximum of 32 V_DDOperation

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C–02, STYLE 1

NI–880S

MRF5S21130S

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

315

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

–65 to +150

°C

stg

200

Watts

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 0

MOTOROLA RF DEVICE DATA

MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3

 Motorola, Inc. 2002

12 3 4 5 6 7...12

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与MRF5S21130相关器件

型号	品牌	获取价格	描述	数据表
MRF5S21130HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21130HSR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21130R3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130S	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130SR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21150	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF5S21150HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150R3	FREESCALE	获取价格	RF POWER FIELD EFFECT TRANSISTORS

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