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MRF5S21090LR3 PDF预览

MRF5S21090LR3

更新时间： 2024-09-30 22:07:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管功率场效应晶体管放大器局域网
页数 文件大小 规格书
12页 582K
描述
RF Power Field Effect Transistors

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MRF5S21090LR3 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
风险等级：5.27Is Samacsys：N
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：65 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：S BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：224 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

MRF5S21090LR3 数据手册

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MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF5S21090L/D  
The RF MOSFET Line  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF5S21090LR3  
MRF5S21090LSR3  
Designed for W-CDMA base station applications with frequencies from 2110  
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-  
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL  
applications.  
2170 MHz, 19 W AVG.,  
2 x W-CDMA, 28 V  
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts,  
IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =  
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz  
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW  
@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability  
on CCDF.  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Output Power — 19 Watts Avg.  
Power Gain — 14.5 dB  
Efficiency — 26%  
IM3 — -37.5 dBc  
ACPR — -40.5 dBc  
CASE 465-06, STYLE 1  
NI-780  
• Internally Matched, Controlled Q, for Ease of Use  
• High Gain, High Efficiency and High Linearity  
• Integrated ESD Protection  
MRF5S21090LR3  
• Designed for Maximum Gain and Insertion Phase Flatness  
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW  
Output Power  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Qualified Up to a Maximum of 32 VDD Operation  
CASE 465A-06, STYLE 1  
NI-780S  
MRF5S21090LSR3  
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
GS  
-0.5, +15  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
224  
1.28  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value (1,2)  
Unit  
Thermal Resistance, Junction to Case  
R
°C/W  
θ
JC  
Case Temperature 80°C, 90 W CW  
Case Temperature 80°C, 19 W CW  
0.78  
0.80  
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to  
access the MTTF calculators by product.  
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.  
Select Documentation/Application Notes - AN1955.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 1  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
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