Datasheet > MRF5S21045MBR1

MRF5S21045MBR1

更新时间： 2024-10-01 10:47:27

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RF Power Field Effect Transistors

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MRF5S21045MBR1 数据手册

Document Number: MRF5S21045

Rev. 1, 7/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF5S21045NR1

MRF5S21045NBR1

MRF5S21045MR1

MRF5S21045MBR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 500 mA,

P_out= 10 Watts Avg., Full Frequency Band, Channel Bandwidth =

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14.5 dB

2170 MHz, 10 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 25.5%

IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -39 dBc @ 3.84 MHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• N Suffix Indicates Lead-Free Terminations

• 200°C Capable Plastic Package

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF5S21045NR1(MR1)

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-02, STYLE 1

TO-272 WB-4

PLASTIC

MRF5S21045NBR1(MBR1)

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +68

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

130

0.74

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

- 65 to +150

°C

stg

200

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 45 W CW

Case Temperature 79°C, 10 W CW

°C/W

1.35

1.48

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF5S21045MBR1相关器件

型号	品牌	获取价格	描述	数据表
MRF5S21045MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21045NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045NR1_09	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21090HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21090HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21090HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF5S21090HSR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21090L	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21090LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors

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