Datasheet > MRF5S21090HR3_08

MRF5S21090HR3_08

更新时间： 2024-10-01 10:47:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
10页	443K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF5S21090HR3_08 数据手册

Document Number: MRF5S21090H

Rev. 3, 10/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF5S21090HR3

MRF5S21090HSR3

Designed for W--CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN--PCS/cellular radio and WLL

applications.

•

Typical 2--carrier W--CDMA Performance: V_DD= 28 Volts, I_DQ= 850 mA,

2110--2170 MHz, 19 W AVG., 28 V

2 x W--CDMA

_out= 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14.5 dB

Drain Efficiency — 26%

IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth

LATERAL N--CHANNEL

RF POWER MOSFETs

•

Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 V_DDOperation

Integrated ESD Protection

Lower Thermal Resistance Package

Low Gold Plating Thickness on Leads, 40µ″ Nominal.

RoHS Compliant

CASE 465--06, STYLE 1

NI--780

MRF5S21090HR3

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A--06, STYLE 1

NI--780S

MRF5S21090HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain--Source Voltage

Gate--Source Voltage

--0.5, +65

--0.5, +15

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

269

1.5

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

--65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 90 W CW

Case Temperature 76°C, 19 W CW

0.65

0.69

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF5S21090HR3 MRF5S21090HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...10

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与MRF5S21090HR3_08相关器件

型号	品牌	获取价格	描述	数据表
MRF5S21090HSR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21090L	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21090LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21090LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21100HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21100HSR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21100LR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780S, CASE 465A-06, 2 PIN
MRF5S21130	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS

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