Datasheet > MRF5S21090HSR3

MRF5S21090HSR3

更新时间： 2024-11-13 22:31:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管过程控制系统个人通信 PCS 放大器 PCN WLL
页数	文件大小	规格书
12页	378K
描述
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

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MRF5S21090HSR3 数据手册

MRF5S21090H

Rev. 1, 12/2004

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S21090HR3

MRF5S21090HSR3

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Typical 2-carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ

2170 MHz, 19 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

850 mA, P_out= 19 Watts Avg., Full Frequency Band, Channel

Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14.5 dB

Drain Efficiency — 26%

IM3 @ 10 MHz Offset — -37.5 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -40.5 dBc @ 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465-06, STYLE 1

NI-780

MRF5S21090HR3

CASE 465A-06, STYLE 1

NI-780S

MRF5S21090HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

269

1.5

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

Characteristic

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 90 W CW

Case Temperature 76°C, 19 W CW

°C/W

0.65

0.69

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF5S21090HR3 MRF5S21090HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF5S21090HSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF5S21090L	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21090LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21090LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21100HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21100HSR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21100LR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780S, CASE 465A-06, 2 PIN
MRF5S21130	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOS
MRF5S21130HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

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