Datasheet > MRF5S21045NBR1

MRF5S21045NBR1

更新时间： 2024-11-14 10:47:27

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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF5S21045NBR1 数据手册

Document Number: MRF5S21045N

Rev. 4.1, 12/2009

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S21045NR1

MRF5S21045NBR1

Designed for W- CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN- PCS/cellular radio and WLL applications.

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 500 mA,

_out= 10 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,

2110-2170 MHz, 10 W AVG., 28 V

2 x W-CDMA

PAR = 8.5 dB @ 0.01% Probability on CCDF.

ꢀPower Gain — 14.5 dB

ꢀDrain Efficiency — 25.5%

ꢀIM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth

ꢀACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

• 200°C Capable Plastic Package

MRF5S21045NR1

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF5S21045NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +68

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

130

0.74

W/°C

Storage Temperature Range

Operating Junction Temperature

-ꢁ65 to +150

200

°C

stg

Table 2. Thermal Characteristics

Characteristic

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 45 W CW

Case Temperature 79°C, 10 W CW

°C/W

1.35

1.48

ꢂꢃ1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

ꢃꢂ2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF5S21045NR1 MRF5S21045NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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与MRF5S21045NBR1相关器件

型号	品牌	获取价格	描述	数据表
MRF5S21045NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045NR1_09	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21090HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21090HR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21090HR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF5S21090HSR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
MRF5S21090L	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21090LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21090LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21100HR3	FREESCALE	获取价格	To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

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