Document Number: MRF5S21045N
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21045NR1
MRF5S21045NBR1
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,
2110-2170 MHz, 10 W AVG., 28 V
2 x W-CDMA
P
out = 10 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth
LATERAL N-CHANNEL
RF POWER MOSFETs
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF5S21045NR1
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S21045NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
-0.5, +68
-0.5, +15
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
130
0.74
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
R
θ
JC
°C/W
1.35
1.48
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S21045NR1 MRF5S21045NBR1
RF Device Data
Freescale Semiconductor
1